https://www.selleckchem.com/pr....oducts/Dasatinib.htm
Multiferroic tunnel junctions (MFTJs) have aroused significant interest due to their functional properties useful for nonvolatile memory devices. So far, however, all of the existing MFTJs have been based on perovskite-oxide heterostructures limited by a relatively high resistance-area (RA) product unfavorable for practical applications. Here, using first-principles calculations, we explore spin-dependent transport properties of van der Waals (vdW) MFTJs which consist of two-dimensional (2D) ferromagnetic Fe n GeTe2 (n = 3, 4, 5) elec
پسندیدن
اظهار نظر
اشتراک گذاری
