https://www.selleckchem.com/pr....oducts/rottlerin.htm
We report on the achievement of novel photovoltaic devices based on the pulsed laser deposition (PLD) of p-type Cu2ZnSnS4 (CZTS) layers onto n-type silicon nanowires (SiNWs). To optimize the photoconversion efficiency of these p-CZTS/n-SiNWs heterojunction devices, both the thickness of the CZTS films and the length of the SiNWs were independently varied in the (0.3-1.0 µm) and (1-6 µm) ranges, respectively. The kësterite CZTS films were directly deposited onto the SiNWs/Si substrates by means of a one-step PLD approach at a substrate
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