https://www.selleckchem.com/products/sbfi-26.html
In a previous work, a hole lifetime of 1.4 ns for GaAsCr sensors was determined for the sensors of the 2016 sensor batch, explaining the so-called "crater effect" which describes the occurrence of negative signals in the pixels around a pixel with a photon hit due to the missing hole contribution to the overall signal causing an incomplete signal induction. In this publication, the "crater effect" is further elaborated by measuring GaAsCr sensors using the sensors from 2017. The hole lifetime of these sensors was 2.5 ns. A focused photo
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