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A film's larger grain structure corresponds to a smaller grain boundary area, which in turn limits grain boundary diffusion, suppressing the thermal stress relief. Additionally, a smaller tensile stress is engendered within the films with larger grains, thereby generating a variation in microstructural changes after annealing. The demanding requirements of photoelectrochemical devices cannot be met by the traditional Ag nanowire preparation method, owing to its undesirable conductivity, difficulty in compounding, and poor heat resistance. We have, by em
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