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Defect engineering in the photoelectrochemical (PEC) process of photoelectrodes has been extensively studied. But insufficient attention has been received about the impact of metal vacancies (VM) in PEC process. Herein, the influence of Cu vacancies (VCu) on PEC performance of copper oxide (CuO) derived from Cu-based metal-organic gel (Cu-MOG) precursor was reported. It can be found that the presence of more VCu can improve the PEC activity of CuO photocathode by facilitating the charge separation and transfer. Moreover, the as-prepare