https://www.selleckchem.com/products/cl-82198.html
Using the mechanism of self-reactive etching between Ga and Ga2O3, Ga2O3 nanopore films were fabricated. The self-reactive etching effects based on as-grown and annealed Ga2O3 films by metal organic chemical vapor deposition were compared. It was found that the nanopore film based on as-grown Ga2O3 film has a uniform size, high density and a small diameter. Ultraviolet-visible light reflection spectra and transmission spectra show that the nanopore film could effectively reduce the reflectivity of light and enhance the light absorption
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