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The highly luminescent dicyanodistyrylbenzene-based charge-transfer (CT) cocrystal based on isometric donor and acceptor molecules with a mixing ratio of 21 is characterized in the thin film regime. Physical vapor deposited films prepared at different substrate temperatures are analyzed in terms of their thin film structure and transistor performance. The thin film morphologies and crystallographic properties including microstrain and mosaic spread strongly dependent on the substrate temperature. Enhanced crystal growth with rising temp